Shared Transistor in a Spin-Torque Transfer Magnetic Random Access Memory (STTMRAM) Cell

ABSTRACT

A spin-torque transfer memory random access memory (STTMRAM) cell is disclosed comprising a selected magnetic tunnel junction (MTJ) identified to be programmed; a first transistor having a first port, a second port and a gate, the first port of the first transistor coupled to the selected MTJ; a first neighboring MTJ coupled to the selected MTJ through the second port of the first transistor; a second transistor having a first port, a second port, and a gate, the first port of the second transistor coupled to the selected MTJ; a second neighboring MTJ coupled to the selected MTJ through the second port of the second transistor; a first bit/source line coupled to the second end of the selected MTJ; and a second bit/source line coupled to the second end of the first neighboring MTJ and the second end of the second neighboring MTJ.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.12/756,081, entitled “Shared Transistor in a Spin-Torque TransferMagnetic Random Access Memory (STTMRAM) Cell”, by Ebrahim Abedifard, andfiled on Apr. 7, 2010.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a spin-transfer torque magnetic randomaccess memory (STTMRAM) cell, and, more particularly, to a configurationof STTMRAM cells having significantly smaller cell size and a tolerancefor higher switching current density.

2. Description of the Prior Art

It is anticipated that spin transfer torque magnetic random accessmemory (STTMRAM) will be commonly employed as non-volatile memory in awide variety of applications in the near future. Benefits realized bythis type of memory include smaller memory size, scalability ofmanufacturing, and low current consumption, among others.

At the most abstract level, STTRAM comprises a plurality of STTRAMmemory cells, otherwise known a memory array. Each memory cell includesa memory element and an access (or select) transistor. Generally, eachmemory element includes a magnetic tunnel junction (MTJ) having a freelayer, fixed layer, and a barrier layer there between; as well as anyother layers necessary or advantageous to the operation of the MTJ(e.g., a cap layer, pinning layer, or under layer).

An MTJ may typically be switched between a parallel or anti-parallelstate. In the parallel state, the storage layer, commonly referred to asthe free layer of the MTJ, has a magnetic orientation that issubstantially in the same direction as that of the MTJ's fixed layer.The magnetic orientation of the fixed layer is static, being permanentlyfixed during fabrication, while the magnetic orientation of the freelayer is intentionally capable of switching from one direction to anopposite direction so as to differentiate between two binary states,i.e. ‘0’ or ‘1’. In an anti-parallel state, the magnetic orientation ofthe free layer is opposite to the magnetic orientation the fixed layer.The resistance of the MTJ changes depending on its state of parallel andanti-parallel. Typically, the resistance of the MTJ is higher at ananti-parallel state than at a parallel state.

A memory cell typically includes a MTJ and an access transistor. Thelatter being used to read and write to the MTJ, basically allowingaccess thereto. However, the requirement of having one transistor perMTJ makes for a large memory cell. Moreover, the access transistor needbe large enough to accommodate the large current required for causingthe MTJ to switch from one magnetic orientation to another. Currently,for an given switching current of an MTJ, the memory cell size isintolerably large, in the order of greater than 20F², where F representsMinimum Feature Size.

The process of reading prior art STTRAM memory cells, i.e., a “readoperation”, is not sufficiently reliable and requires improvement. Anexample of where improvement is necessary includes reducing the sensecurrent, the current applied to the MTJ during a read operation, to besignificantly lower than the current which is used to perform a writeoperation (write current). Otherwise the state (or magnetizationdirection) of the MTJ may be undesirably changed (e.g., written) duringwhat is intended to be a read operation. This is unacceptable becausethe state of the MTJ is representative of the bit value stored, and, iferroneously changed, the data thereby is corrupted.

The number of devices is increasing in which STTRAM is a viable storageoption. However, as the applications for these devices become ever moredemanding of the hardware, the actual devices are shrinking in responseto consumer demands for portability. Thus, as memory capacitiesincrease, the footprint of the memory component must concurrentlydecrease.

Therefore, in light of the foregoing, what is needed is a sharedtransistor STTMRAM memory cell made of a memory element and an accesstransistor, the shared transistor configuration reducing the memory cellfootprint while increasing both the memory element density and theswitching current density.

IN THE DRAWINGS

FIG. 1 shows a portion of a STTMRAM array 10 in accordance with anembodiment of the present invention.

FIG. 2 shows array 10 with the flow of the switching current through MTJ16 being in a direction opposite to that of MTJ 16 in FIG. 1.

FIG. 3 shows the array 10 of FIGS. 1 and 2 in schematic form.

FIG. 4 shows a portion of the array 10 with the relevant layers of twoof the MTJs and the two MTJs coupled to a common transistor.

FIG. 5 shows a plan view of some of the MTJs and transistors of FIG. 3.

FIG. 6 shows the array 10 in yet another schematic form, showing a morecomprehensive layout than FIG. 3.

FIG. 7 shows a cross-sectional view of the plan view drawing of array 10of FIG. 5 looking into FIG. 5 from the left side of the figure.

FIG. 8 shows a cross-sectional view of the plan view drawing of array 10of FIG. 5 looking into FIG. 5 from the right side of the figure.

FIG. 9 shows a flow chart of some of the steps performed when writing toa selected (“select”) MTJ, in accordance with a method of the presentinvention.

FIG. 10 shows some of the steps performed during a read operation of aselected MTJ, in accordance with a method of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

In the following description of the embodiments, reference is made tothe accompanying drawings that form a part hereof, and in which is shownby way of illustration of the specific embodiments in which theinvention may be practiced. It is to be understood that otherembodiments may be utilized because structural changes may be madewithout departing from the scope of the present invention. It should benoted that the figures discussed herein are not drawn to scale andthicknesses of lines are not indicative of actual sizes.

In accordance with an embodiment of the present invention, a selectedspin-transfer torque magnetic random access memory (STTMRAM) cellincludes a selected magnetic tunnel junction (MTJ) and an accesstransistor, the MTJ identified to be programmed by switching the statethereof upon application of switching current sufficient to switch themagnetic state of the selected MTJ. Adjacent to the selected MTJ are twoneighboring MTJs. The first neighboring MTJ is coupled to the selectedMTJ through the above-noted access transistor, and the secondneighboring MTJ is coupled to the selected MTJ through a second accesstransistor.

In accordance with an embodiment of the present invention, a first bitline/source line is coupled to the selected MTJ, and a second bitline/source line is coupled to both the first neighboring MTJ and thesecond neighboring MTJ. During programming (or writing), the switchingcurrent applied to the selected MTJ is derived from the current throughthe first and second neighboring MTJs, with substantially half of theswitching current being provided by the first neighboring MTJ and theremainder of the switching current being provided by the secondneighboring MTJ.

In accordance with an embodiment of the present invention, eachtransistor is shared by two STTRAM elements, and each MTJ is coupled totwo transistors, thereby achieving a cell layout size of 12F², where Frepresents Minimum Feature Size, commonly employed as a unit of measurefor memory cells. The STTMRAM cell of the various embodiments of thepresent invention tolerates higher switching current density.

Referring now to FIG. 1, a portion of a STTMRAM array 10 is shown inaccordance with an embodiment of the present invention. The array 10 isshown to include transistors 22, 24, 26 and 28, which are each commonlyreferred to as access transistors and MTJs 16, 18 and 20, in accordancewith an embodiment of the present invention. It is noted that the array10 typically comprises many more transistors and MTJs than that which isshown in FIG. 1.

In the embodiment of FIG. 1, switching current, i.e., the thresholdcurrent for switching the state of a selected magnetic tunnel junction(MTJ), is shown to flow from the bottom of the page to the top of thepage (or from line 12 to line 14), in a direction shown by the arrow 30,and to left of the page, in a direction shown by the arrow 32. This pathor direction of current flow is from here on defined as “reversedirection”.

The MTJs of the array 10 are arranged such that MTJ 16 has twoneighboring MTJs, neighboring MTJ 18 and neighboring MTJ 20. MTJ 16 isherein referred to as “selected” MTJ 16 because, by way of example, inthe embodiments disclosed herein, MTJ 16 is the exemplary MTJ to whichwriting and read current is applied. It is understood that other MTJs inthe array 10 may be selected for reading or writing.

Each of the transistors 22, 24, 26 and 28 includes a gate that iscoupled to the word line. For example, transistor 22 has a gate 36 thatis coupled to the word line ‘n’ or WLn, transistor 24 has a gate 42 thatis coupled to the word line ‘n+1” or WLn+1, transistor 26 has a gate 48that is coupled to the word line ‘n+2’ or WLn+2 and the transistor 28has a gate 54 that is coupled to the word line n+3 or WLn+3.

Bit/source line 12 is a shared bit and source line. Bit/source line 12is “shared”, because depending on the direction of switching currentapplied to the selected MTJ, it may be either the bit line or the sourceline. Similarly, bit/source line 14 is a shared bit and source line,and, depending on the direction of the switching current applied to theselected MTJ, it may be either the bit line or the source line. In theembodiment of FIG. 1, the direction of the flow of the switchingcurrent, as shown by the arrows 30 and 32, causes bit/source line 12 tobe the bit line, and bit/source line 14 to be the source line.

Transistor 22 has a source port 34 and a drain port 38, transistor 24has a drain port 40 and a source port 44, transistor 26 has a sourceport 46 and a drain port 50, and transistor 28 has a drain port 52 and asource port 56.

It is understood that array 10 typically includes more than fourtransistors and three MTJs, but for the sake of simplicity only a subsetof transistors and MTJs of array 10 are shown in FIG. 1. For example,array 10 may include additional transistors to the left of transistor 22and/or to the right of transistor 28. Similarly, array 10 may includeMTJs to the left of MTJ 18 and/or to the right of MTJ 20. Similarlystill, array 10 may include additional MTJs and transistors locatedabove and below the MTJs and transistors shown in FIG. 1.

One side of MTJ 18 is coupled to both the port 38 of transistor 22 andthe port 40 of transistor 24; and at the other side of MTJ 18 it iscoupled to bit/source line 12.

One side of MTJ 16 is coupled to the port 44 of transistor 24 and theport 46 of transistor 26; at the other side of MTJ 16 it is coupled tobit/source line 14.

One side of MTJ 20 is coupled to both the port 50 of transistor 26 andthe port 52 of transistor 28; and at the other side of MTJ 20 it iscoupled to bit/source line bit/source line 12.

It is understood that while two bit/source lines are shown in FIG. 1, inactual operation employing additional MTJs and transistors, additionalbit/source lines may be connected.

In the arrangement shown in FIG. 1, MTJ 16 is coupled to MTJ 18 throughtransistor 24, and MTJ 16 is further coupled to MTJ 20 throughtransistor 26.

Depending on the flow of the switching current through the selected MTJ,the ports of the transistors act as drain (D) or as source (S). Morespecifically, in array 10 of FIG. 1, depending upon the flow ofswitching current through selected MTJ 16, the ports of transistor 24may be either drain or source, and the ports of transistor 26 may beeither drain or source. As array 10 is shown in FIG. 1, with the flow ofthe switching current through the selected MTJ 16 to bit/source line 14,port 40 of transistor 24 is the drain and port 44 of transistor 24 isthe source, port 46 of transistor 26 is the source and port 50 oftransistor 26 is the drain, and port 52 of transistor 28 is the drainand port 56 of transistor 28 is the source.

In the embodiment of FIG. 1, selected MTJ 16 may be programmed (writtento), or read. As is readily known to those skilled in the art, an MTJincludes a free layer, a barrier layer and a fixed layer with the freelayer switching its magnetic orientation from parallel to anti-parallelor vice versa relative to the fixed layer when sufficient switchingcurrent flows through the MTJ. Such switching results in the declarationof a logic state from ‘0’ to ‘1’ or ‘1’ to ‘0’. Where the current, ‘I’,is adequate to switch the free layer of selected MTJ 16, therebyprogramming selected MTJ 16, it is known as the “switching current”.During programming of the selected MTJ 16, substantially half of I (or½×I) passes from bit/source line 12 through MTJ 18 and transistor 24 toselected MTJ 16, and another (or the remaining) half of I (or ½×I)passes from bit/source line 12 through MTJ 20 and transistor 26 toselected MTJ 16. Transistors 24 and 26 are substantially of equal size,thereby rendering the current flowing through each of these transistorsto be of substantially equally amount. Therefore, the current passingfrom bit/source line 12 through MTJ 18 and transistor 24 to selected MTJ16 and the current passing through from bit/source line 12 through MTJ20 to selected MTJ 16 are the same. The direction of current flow inthis scenario is represented in FIG. 1 by arrow 60, indicating thecurrent flowing through MTJ 18 to MTJ 16, and by arrow 62, indicatingthe current flowing through MTJ 20 to MTJ 16.

Thus, during programming of selected MTJ 16, upon selecting oridentifying MTJ 16, half of I is passed from each of the MTJs 18 and 20through the MTJ 16 and accumulated. The reduced current of ½I, which ispassed through each of the MTJs 18 and 20, is advantageously not enoughto write or program the unselected MTJs, MTJs 18 and 20. In accordancewith an embodiment of the present invention, the current sufficient forwriting an MTJ, or reversing the magnetic orientation of its free layer,is about 150 to 250 μA. Accordingly, during writing, each of theneighboring MTJs thereby passes about 75 to 125 μA to the selected MTJ.

The writing current may pass through selected MTJ 16 in one of twodirections, depending on the value being written to MTJ 16. That is,writing current passed through the selected MTJ 16 in one direction,e.g., from line 12 to line 14, writes a first value, e.g., 0; whilechanging the voltage point of the circuit causes writing current to passthrough selected MTJ 16 in the opposite direction, e.g., from line 14 toline 12, writing a second value, e.g., 1.

In accordance with an embodiment of the present invention, the voltageapplied during a write operation may be close to Vcc, which, in anexemplary embodiment, is approximately 1.2 volts.

In accordance with an embodiment of the present invention, selected MTJ16 of array 10 is read in the following manner. Bit/source line 12, thebit/source line to which that neighboring MTJs are coupled, but not theMTJ selected for reading, is brought up to Vcc. Word line WLn+1 andWLn+2, each of the word lines to which the selected MTJ 16 is coupledvia access transistors 24 and 26 respectively, are also pulled up toVcc. A small current is applied to bit/source line 14, the bit/sourceline to which selected MTJ 16 is coupled. In one embodiment of thepresent invention, the small current applied to bit/source line 14 is inthe range of 10 to 50 μA.

Selected MTJ 16 then acts as a voltage source where V is equal to thevoltage drop across selected MTJ 16, and the voltage drop of MTJ 18 andMTJ 20 is negligible thereby not affecting the voltage on the selectedMTJ 16 being sensed.

For a given switching current of an MTJ, as a measure of comparison toprior art techniques, the embodiments herein offer a minimum cell sizeof 12F² versus prior art techniques, which would require a cell size ofgreater than 20F².

During a read operation of selected MTJ 16, neighboring MTJs 18 and 20may each be representing either a ‘0’ or a ‘1’ binary state, making itundesirable for the state of the neighboring MTJs to have any effectupon the value read from MTJ 16. In other words, during a read ofselected MTJ 16, MTJ 18 may be storing either a ‘0’ or a ‘1’ value, and,similarly, MTJ 20 may be storing either a ‘0’ or ‘1’ value, thus thestates of MTJ 18 and MTJ 20 should be advantageously ignored. Bybringing the gates 42 and 48 as well as bit/source line 12 up to Vcc,the states of MTJ 18 and MTJ 20 are effectively ignored.

The voltage sensed on bit/source line 14 during the read operation ofselected MTJ 16 is then compared to a reference voltage using readcircuitry commonly known in the art. The sensed voltage, when comparedto the reference voltage, is used to determine whether selected MTJ 16is in a high or low state, and, accordingly, its current binary state.

In accordance with an embodiment of the present invention, the voltageapplied to gate 42 and gate 48, during a read operation, may be close toVcc, which, in an exemplary embodiment, is approximately 1.2 volts.

In the embodiment of FIG. 1, word lines WLn and WLn+3 are substantiallyat a voltage level of 0, while WLn+1 and WLn+2 are substantially at avoltage level of +V.

During a read operation, as will be discussed further below, theselected MTJ, in this case, MTJ 16, is read while advantageouslyavoiding the resistances of MTJ 16's neighboring MTJs, MTJ 18 and MTJ20. This is because the voltage across the MTJs 18 and 20 do not affectthe voltage across MTJ 16. More specifically, the voltage at port 44 isdesigned to be equal to or below a certain level and to remainsubstantially fixed. Namely, the voltage at port 44 is (Vcc−Vt) minusthe voltage drop across the transistors 24 and 26, with Vt being thethreshold voltage of the transistor 24, while the potential across MTJ18 is designed to be higher than Vcc−Vt and never being equal to or lessthan (Vcc−Vt) minus the voltage drop across the transistors 24 and 26,during the read operation. Similarly, the voltage or potential acrossthe MTJ 20 is designed to be higher than Vcc−Vt. This is achievedbecause the current flowing through SL is a small current valuerenderting the voltage drop across each of the MTJ 18 and MTJ 20 to besmall and almost close to the Vcc level thus rendering the resistancesof the MTJs 18 and 20 to be negligible.

In operation, during a read operation, the voltage across MTJ 16 ismeasured against the voltage of R_(L) and R_(H) to determine the logicalstate of the MTJ 16 without any effects from the MTJs 18 and 20. By wayof example, assuming Vcc is 1.2V and Vt is 0.3V and the voltage dropacross each of the transistors 24 and 26 (this depends on the size ofthe transistor but for the sake of simplicity, the voltage drop will beassumed to be equal for these transistors) to be 0.3V, the voltage atport 44 is less than Vcc−Vt—voltage drop across the transistors 24 and26 (the drop across these transistors is equal to the value of the dropacross one transistor due to the parallel configuration of thesetransistors) or 1.2−0.3−0.3 or 0.6V, whereas, assuming the resistance ofMTJ 16 for R_(L) is 1 kilo ohms and for R_(H) is 3 kilo ohms, thevoltage at port 40 is between 1.18V and 1.14V, respectively. This is sobecause the voltage at port 40 for the case where MTJ 16 is R_(H) isVcc−(3 kilo ohms×20 micro amps) or 1.14V. A similar calculation can beperformed for R_(L) yielding the voltage at port 40 being 1.18V. Thus,because the voltage at port 44 will not exceed 0.6V and therefore willnot be in the range experienced by port 40, the resistance of MTJ 18does not affect the reading of MTJ 16. Due to an analogous reasoning,the resistance of MTJ 20 does not affect the reading of MTJ 20.

FIG. 2 shows array 10 with the flow of the switching current throughselected MTJ 16 being in a direction opposite to that of MTJ 16 inFIG. 1. In array 10 of FIG. 2 switching current through MTJ 16 flowsfrom bit/source line 14 to bit/source line 12, as indicated by arrow 64and arrow 66. That is, the current, as indicated by arrow 64 and arrow66, flows from bit/source line 14, through selected MTJ 16, throughtransistor 24, through MTJ 18, and to bit/source line 12. The directionof current flow through array 10 as shown in FIG. 2 is defined as beingin the “forward direction”.

The word lines WLn, WLn+1, WLn+2 and WLn+3 remain at the same state asthat of FIG. 1. In FIG. 2, bit/source line 12 acts a source line, andbit/source line 14 acts as a bit line. In addition to the reversal infunction of bit/source lines 12 and 14 between array 10 of FIG. 1 andarray 10 of FIG. 2, in array 10 of FIG. 2 the gates of the transistors22, 24, 26, and 28 are switched. More specifically, port 40 is now thesource of transistor 24 and port 44 is now the drain of transistor 24;port 46 is now the drain of transistor 26 and port 50 is now the sourceof transistor 26; and port 52 is now the source of transistor 28.

Writing and reading operations are performed in the same manner asdescribed relative to FIG. 1, however, during a read operation, +V isapplied to bit/source line 14. Also, during a read operation, unlike awrite operation, current is substantially lowered so that the MTJ is notstressed, as read operations can occur an indefinite number of timeswhile write operations occur a finite number of times

It is understood that while MTJ 16 is indicated and discussed relativeto the various embodiments herein, any MTJ may be selected forprogramming and/or reading. For example MTJ 18 may be the “selected” MTJby virtue of selecting MTJ 18 for writing and/or reading. MTJ 18 may beselected and written to by passing ½×I through MTJ 16, and the other ½×Ithrough the other MTJ adjacent to MTJ 18, which is not shown in FIGS. 1and 2.

In FIGS. 1 and 2, the direction of switching current flow is dependentupon the value being programmed to the selected MTJ. For example, whenprogramming a binary ‘1’, the flow may be in one direction while whenprogramming a binary ‘0’, the flow may be in the opposite direction. Inalternative embodiments, the MTJs may be stacked MTJs with each MTJ ofthe stack having different switching current density (Jc), such as amulti-level cell (MLC) as disclosed in the applications below.

The embodiments of the present invention shown in FIGS. 1 and 2advantageously allow for symmetric write operations in that a “1” or “0”are written using exactly the same voltage bias condition.

It is understood that MTJs function as variable resistors. In thevarious embodiments of the present invention, any type of MTJ may beemployed. Exemplary MTJs are disclosed U.S. patent application Ser. No.11/674,124, filed on Feb. 12, 2007, and entitled “NON-UNIFORM SWITCHINGBASED NON-VOLATILE MAGNETIC BASED MEMORY”, U.S. patent application Ser.No. 11/678,515, filed on Feb. 23, 2007, and entitled “A HIGH CAPACITYLOW COST MULTI-STATE MAGNETIC MEMORY”, U.S. patent application Ser. No.11/739,648, filed on Apr. 24, 2007, and entitled “NON-VOLATILE MAGNETICMEMORY WITH LOW SWITCHING CURRENT AND HIGH THERMAL STABILITY”, U.S.patent application Ser. No. 11/776,692, filed on Jul. 12, 2007, andentitled “NON-VOLATILE MAGNETIC MEMORY ELEMENT WITH GRADED LAYER” andU.S. patent application Ser. No. 11/740,861, filed on Apr. 26, 2007, andentitled “A HIGH CAPACITY LOW COST MULTI-STACKED CROSS-LINE MAGNETICMEMORY” and U.S. patent application Ser. No. 11/932,940, filed on Oct.31, 2007, and entitled “CURRENT-CONFINED EFFECT OF MAGNETICNANO-CURRENT-CHANNEL (NCC) FOR MAGNETIC RANDOM ACCESS MEMORY (MRAM)” andU.S. patent application Ser. No. 12/397,255, filed on Mar. 3, 2009, andentitled “A MULTI-STATE SPIN-TORQUE TRANSFER MAGNETIC RANDOM ACCESSMEMORY”, the disclosures of which are incorporated by reference asthough set forth in full.

FIG. 3 shows the array 10 of FIGS. 1 and 2, in schematic form, but withfewer transistors shown and an additional MTJ shown relative to FIGS. 1and 2. FIG. 3 better shows how each MTJ is alternatively connected toeither one of bit/source line 12 or bit/source line 14. For example, asshown in FIG. 3, MTJ 17 is next to MTJ 18, MTJ 18 is next to MTJ 17 andMTJ 16, MTJ 16 is next to MTJ 18 and MTJ 20, and MTJ 20 is next to MTJ16. MTJ 17 is shown connected to bit/source line 12, whereas MTJ 18,which is positioned next to MTJ 17, is shown connected to bit/sourceline 14; still further, MTJ 16, which is positioned next to MTJ 18, isshown connected to bit/source line 12; and MTJ 20, which is positionednext to MTJ 16, is shown connected to bit/source line 14. Such aconfiguration enables neighboring MTJs to pass ½×I to the selected MTJwithout interference. Transistor 82 is coupled to both MTJ 18 and MTJ 16for read and write operations.

For simplicity, only the four MTJs 16, 17, 18, and 20 are shown in FIG.3, but it is understood that additional MTJs exist above MTJ 17 andadditional MTJs exist below MTJ 20 as shown. These additional MTJs wouldare connected to bit/source line 12 and bit/source line 14 in the samealternating manner.

Referring now to FIG. 4, a portion of the array 10, with the relevantlayers of two of memory elements including MTJ 16 and MTJ 18, is shown.MTJ 16 and MTJ 18 are shown coupled to a common transistor, transistor82. In this manner, FIG. 4 shows a detailed three-dimensional view ofthe MTJs 16 and 18 of array 10 of FIG. 3. MTJs 16 and 18 are included inrespective memory elements that also include layers in addition to theMTJ layers. For example, MTJ 16 is shown included in a memory elementthat additionally comprises a pinning layer 73. On top of pinning layer73 is formed fixed layer 72, on top of fixed layer 72 is formed anintermediate (or “barrier” or “tunneling”) layer 75, and on top ofintermediate layer 75 is formed free layer 74. The layers 73, 72, 75 and74 collectively comprise a memory element and may sometimes be referredto as comprising MTJ 16. Similarly a memory element is shown to includeMTJ 18 and additionally includes a pinning layer 83, on top of pinninglayer 83 is formed fixed layer 76, on top of fixed layer 76 is formedintermediate layer 85, and on top of intermediate layer 85 is formedfree layer 78. The layers 83, 76, 85, and 74 collectively comprise amemory element or sometimes may be considered to comprise MTJ 18. Theintermediate layers 75 and 85 may be any layer known to those skilled inthe art to separate the respective free and fixed layers. For example,intermediate layers 75 and 85 may otherwise be referred to as a barrierlayer, and comprise a layer of MgO in accordance with an embodiment ofthe present invention. In alternative embodiments of the presentinvention, intermediate layers 75 and 85 may be tunneling layers.

Formed upon each of the free layers 74, is a bit/source line. Asdiscussed relative to FIGS. 1 and 2, the bit/source lines 12 and 14 ofadjacent MTJs disclosed herein (e.g., MTJs 16 and 18) are complementaryto each other. For example, when bit/source line 12 operates as a bitline in a read or write operation, then bit/source line 14 operates as asource line. Conversely, when bit/source line 12 operates as a sourceline in a read or write operation, then bit/source line 14 operates as abit line.

In FIG. 4, word line 84 is shown coupled to the gate of transistor 82,and drains/sources 101 are shown coupled to a respective MTJ through acorresponding and respective contact 92. Each of contacts 92 may beformed of any material capable of passing current from transistor 82 toits respective MTJ, or from the respective MTJ to transistor 82.

Each of MTJ 16 and MTJ 18 has a drain/source 101, to which it isconnected through a contact 92. As discussed relative to FIGS. 1 and 2,drains/sources 101 may each function as either a drain or a source.Whether a drain/source 101 functions as a drain or a source at anyparticular time is dependent upon the direction of current flow. Currentis shown to flow bi-directionally depending on the value beingprogrammed, such as a ‘1” or ‘0’. Generally, when MTJ 16 is being reador written by the passage of ½×I through MTJ 18 or when MTJ 18 is beingread or written by the passage of current of ½×I through MTJ 16, each ofthe sources/drains 101 shown in FIG. 4 serve opposite but complementaryroles. In other words, when the source/drain 101 connected to MTJ 18,through its respective contact 92, is the source, then the source/drain101 connected to MTJ 16 is the drain. Conversely, when the source/drain101 connected to MTJ 18 is the drain, then the source/drain 101connected to MTJ 16 is the source.

Referring now to FIG. 5, a plan view of a shared 2 transistor and 1 MTJ(or S2T1J) configuration, as discussed above relative to FIGS. 1-4above, is shown. In accordance with an embodiment of the presentinvention, the minimum cell width of a cell of array 10 is 4F (‘F’ beingfeature) and a minimum cell length thereof is 3F and the minimum cellsize is therefore approximately 12F² or 3F×4F. The minimum cell widthincludes a 1F spacing to allow 0.5F for space on each side of the celland 3F for the cell itself. Minimum cell length is 3F because of 1Fspacing is needed with 0.5F per side of the cell. The minimum transistorwidth is 3F times 2 or approximately 6F, which is advantageously sixtimes greater than prior art cells. Greater transistor width allows forgreater switching current density (Jc), which is desirable due to greattechnical challenges to lower Jc and maintain a smaller cell size. Thisapproach requires less constraint on Jc.

Using a 65 nanometer process lithography, and a minimum transistor widthof 6F, Jc can advantageously allow under 3 mega amps per squaredcentimeter, which is well higher than the current 1 mega amp per squaredcentimeter targeted by prior art techniques.

FIG. 6 shows the array 10 including additional MTJs and transistors.Namely, an array of rows and columns is shown to include 28 MTJs 105 and24 transistors 103. It is noted that the sharing of source lines withbit lines (bit/source line 12 and bit/source line 14) contributes toadvantageously decreasing the size of array 10, because the cellsmaintain around 12F² cell size, and are associated with a higher Jc.This is advantageous in comparison to the prior art memory cell arrayswhich require increased size, growing larger than about 25F², tomaintain the same Jc as the embodiments of the present inventiondisclosed above. Accordingly, array 10 or any other similar embodimentwhere the bit and source lines are shared is an attractive candidate forreplacement of conventional memory, such as in handheld devices andother consumer goods as well as other products.

Referring now to FIGS. 7 and 8, cross-sectional views of array 10 ofFIG. 5 are shown. FIG. 8 shows a cross-sectional view of the plan viewdrawing of array 10 of FIG. 5, looking into FIG. 5 from view AA.Accordingly, MTJs 16 and 18 are visible. FIG. 8 shows a cross-sectionalview of the plan view drawing of array 10 of FIG. 5, looking into FIG. 5from view BB. Accordingly, MTJ 90 is visible.

As shown in FIGS. 7 and 8, N+ doped regions 102 are formed in aP-substrate 100. Upon the N+ doped regions 102 are formed contacts 92,and on top of each contact 92 is formed an MTJ (MTJs 16, 18, and 90 areshown). Upon each of the MTJs is formed a bit line/source line 12 or 14.As previously discussed, bit/source line 12 and bit/source line 14 areformed in a manner so that they are connected in an alternating fashionto neighboring MTJs. The contacts 92 couple the transistors to the MTJs.The word lines 110 are formed between and on top of the N+ doped regions102, and form the gate of the transistors. The transistors are formed inthe P substrate 100 and include the N+ doped regions 102.

FIG. 9 shows a flow chart of some of the steps performed when writing toa selected (“select”) MTJ, in accordance with a method of the presentinvention. At step 150, a write operation to write to a selected MTJ,using the forward action as shown in FIG. 2, is initiated. Forwardaction is determined by the logic value being written, as is reverseaction. For the sake of example, forward action is discussed now.

By way of example, the selected MTJ is MTJ 16 of FIG. 2. Next, referringto FIG. 2, the BL 14 is raised to a voltage that is substantially equalto Vcc and the SL 12 is set to a voltage that is substantially equal to0 volts. It is important to note that the foregoing BL and SL voltagesettings only refer to the selected MTJ 16 and none others. That is, theBL and SL of all unselected MTJs are set substantially equal to Vcc.This advantageously avoids stress on the gates of the access transistorscorresponding to unselected MTJs thereby increasing reliability.

Next, at step 154, the WLn+1 at gate 42 and WLn+2 at gate 48 of theneighboring access transistors to the MTJ 16 are raised to a voltagelevel that is substantially Vcc+V where V is a small voltage relative toVcc. In one embodiment of the present invention, the V is approximately0.5V.

Due to the forward action, current flows from the BL 14 through the MTJ16 and the transistor 24 and the MTJ 18 to the SL 12. The currentflowing through the transistor 24 is at a level that is higher (moredrive current, IDS) than prior art techniques due to the voltage at thegates of the transistors 24 and 26 being raised as discussed above. Thecurrent increase through the transistor 24 is approximately 10% perevery tenth of a volt increase in gate voltage higher than thoseexperienced with prior art techniques.

The foregoing voltage settings and configuration effectively andadvantageously avoid electrical specification violations of a transistorwhere the transistors 24 and 26 are concerned. That is, rather than thetypical specification requirement of the gate voltage of thesetransistor being approximately 1.2V, it is approximately 1.7V or 0.5volts higher than the specification requirements, and the voltage at thedrain of these transistors is approximately 0.5V rather than the typical0 volts and the voltage at the source of these transistors isapproximately 1.2V rather than 0.7V.

In the case of reverse action, SL 14 of FIG. 1 is set to Vcc and BL 12is et to zero volts. In the figures shown herein, it is noted that theBL 14 in the forward action is the same line or physical wire as the SL14 in the case of reverse action and the BL 12 in the case of reverseaction is the same physical line as the SL 12 in the case of forwardaction. That is, 14 is either SL or BL depending on the value beingwritten, similarly, 12 is either SL or BL depending on the value beingwritten.

Use of fixed numbers is no indication of being limited to the fixednumbers. The figures are not drawn to scale and the thickness of thelines is no indication of the size indicated by the lines.

FIG. 10 shows some of the steps performed during a read operation of aselected MTJ, in accordance with a method of the present invention. Atstep 160, the read operation is initiated to read a selected MTJ, suchas the MTJ 16. It is noted that in one embodiment of the presentinvention, all read operations are performed as forward action becausethere is no need for basing the direction of current on the value beingwritten such as in the case of write operations. Alternatively, thereverse action may be employed to read but there is no need to use boththe reverse and the forward actions, as in the case of the writeoperation. In the discussion and example to follow, reverse action isemployed.

Next, at step 162, BL 14 is raised to be approximately the same value asVcc and SL 12 is set to approximately have a current level required forreading MTJ 16, Iread, flow therethrough. BL 14 and SL 12 for allunselected MTJs, such as but not limited to MTJs 18 and 20 are set to orremain at approximately 0V, which advantageously reduces the stress onthe unselected MTJs thereby lengthening their lifetime and/or increasingreliability of the memory array. Next, at step 164, the voltage at eachof the ports 42 and 46 is raised to Vcc+V. Next, at step 166, thevoltage at the port 40 of the transistor 24 becomes the voltage at BL14, V_(BL), minus the resistance of MTJ 18 times Iread orV_(BL)−(R_(MTJ18)×Iread) and, at step 168, the voltage at the port 50 ofthe transistor 26 becomes V_(BL) minus the resistance of MTJ 20 timesIread or V_(BL)−(R_(MTJ20)×Iread).

Next, at step 170, the voltage at each of the gates 44 and 46 is raisedto be no larger than Vcc−V−Vtr and maintained at this level, where Vt isthe threshold voltage of each corresponding transistors 24 and 26 andVtr is the voltage drop across each of the transistors 24 and 26. Next,at step 172, the voltage at SL 14 is raised to the same voltage as thevoltage at gate 44 minus Iread times the resistance of MTJ 16 orV_(gate44)−Iread×R_(MTJ16). In this manner, the MTJ 16's state isdetermined by sensing the voltage of SL 14 in the case where reverseaction is used to read and then the voltage of SL 14 is compared to areference voltage to determine the logic state of the MTJ 16.

This process is perhaps better understood by way of an example where Vccis 1.2V, R_(L) is 1K Ohms, R_(H) is 3K Ohms, Iread is 20 micro Amps andVt is 0.3V. Given these exemplary values, the following voltages areexperienced at indicated ports during reading of MTJ 16.

Vport40=Vcc−(R _(H) ×Iread)=1.2V−(3K Ohms×20 micro Amps)=1.14V for R_(H)  Eq. (1)

Or

Vport40=Vcc−(R _(L) ×Iread)=1.2V−(1K Ohms×20 micro Amps)=1.18V for R_(L)  Eq. (2)

Where Vport40 is the voltage at port 40.

Vport28=Vcc−(R _(H) ×Iread)=1.2V−(3K Ohms×20 micro Amps)=1.14V for R_(H)  Eq. (3)

Or

Vport28=Vcc−(R _(L) ×Iread)=1.2V−(1K Ohms×20 micro Amps)=1.18V for R_(L)  Eq. (4)

Where Vport28 is the voltage at port 28.

Vport44=Vcc−Vt−Vtr=1.2V−0.3V−0.3V=0.6V Eq.  (5)

Where Vport44 is the voltage at port 44 and Vtr is the voltage dropacross the transistor 24.

V _(SL14) =Vport44−(R _(MTJ18)×20 micro Amps)=0.6V−(R _(MTJ18)×20 microAmps)=0.6V−(1K Ohms×20 micro Amps)=0.58V for R _(L) or 0.6V−((3K Ohms×20micro Amps)=0.54V for R _(H)  Eq. (6)

Where V_(SL14) is the voltage at SL 14.

The voltage at SL 14, or V_(SL14), is accordingly sensed to read thestate of MTJ 18 because in accordance with Eq. (6), it is based on theresistance of MTJ 18. The reference voltage, which is subsequently usedto compare to the V_(SL14) to determine the logic state of MTJ 16, isdesigned to have a value that is in between the V_(SL14) for R_(H) andthe V_(SL14) for R_(L), in this case 0.54 to 0.58V. In this example, anappropriate level for the reference voltage would be 0.56V.

Although the present invention has been described in terms of specificembodiment, it is anticipated that alterations and modifications thereofwill no doubt become apparent to those more skilled in the art. It istherefore intended that the following claims be interpreted as coveringall such alterations and modification as fall within the true spirit andscope of the invention.

1. A method of writing to a spin-torque transfer memory random accessmemory (STTMRAM) cell of an STTMRAM array comprising: setting thevoltage of a bit line that is coupled to a selected magnetic tunneljunction (MTJ) to be substantially equal to a voltage Vcc; setting thevoltage of a sense line (SL) that is coupled to a first neighboring MTJto be substantially equal to zero, the first neighboring MTJ beingcoupled to a first transistor that is coupled to the first neighboringMTJ, the selected MTJ being coupled to a second transistor, the firstand second transistors each having a gate coupled to a respective wordline; maintaining the voltage of bit lines and sense lines coupled tothe MTJs of the STTMRAM array, other than the bit line and sense linethat are coupled to the selected MTJ and the first neighboring MTJ,substantially equal to the voltage Vcc; and raising the voltage of eachof the word lines coupled to the gates of the first and secondtransistor to a voltage that is equal or higher than the voltage Vcc toprogram the selected MTJ.
 2. The method of writing to a spin-torquetransfer memory random access memory (STTMRAM) cell of an STTMRAM array,as recited in claim 1, further including a second neighboring MTJcoupled to the second transistor, wherein a switching current is appliedto the selected MTJ and it is derived from the current flowing throughthe first and second neighboring MTJs with substantially half of theswitching current being provided by the first neighboring MTJ and theremainder of the switching current being provided by the secondneighboring MTJ.
 3. The method of writing to a spin-torque transfermemory random access memory (STTMRAM) cell of an STTMRAM array, asrecited in claim 1, wherein during the raising step, the voltage that isequal or higher than Vcc is only high enough to switch the state of theselected MTJ to cause programming of the selected MTJ.
 4. A spin-torquetransfer memory random access memory (STTMRAM) array comprising: aselected magnetic tunnel junction (MTJ) identified to be programmed byswitching the state thereof upon application of a switching currentsufficient to switch the state of the selected MTJ, the selected MTJhaving a first end and a second end; a first transistor having a firstport, a second port and a gate, the first port of the first transistorcoupled to the selected MTJ at the first end of the selected MTJ; afirst neighboring MTJ having a first end and a second end, the first endof the first neighboring MTJ coupled to the selected MTJ through thesecond port of the first transistor; a second transistor having a firstport, a second port, and a gate, the first port of the second transistorcoupled to the selected MTJ at the first end of the selected MTJ; asecond neighboring MTJ having a first end and a second end, the firstend of the second neighboring MTJ coupled to the selected MTJ throughthe second port of the second transistor; a first bit/source linecoupled to the second end of the selected MTJ; and a second bit/sourceline coupled to the second end of the first neighboring MTJ and thesecond end of the second neighboring MTJ.
 5. The STTRAM array, asrecited in claim 4, wherein during programming, the switching currentapplied to the selected MTJ is derived from the current flowing throughthe first and second neighboring MTJs with substantially half of theswitching current being provided by the first neighboring MTJ and theremainder of the switching current being provided by the secondneighboring MTJ.
 6. The STTRAM array, as recited in claim 5, wherein theswitching current applied to the selected MTJ derived from the currentthrough the first and second neighboring MTJs is substantially between150 and 250 μA.
 7. The STTRAM array, as recited in claim 4, whereinduring reading of the selected MTJ, a positive voltage substantiallyequal to Vcc is applied to the first neighboring MTJ and secondneighboring MTJ through the second bit/source line, a positive voltagesubstantially equal to Vcc is applied to the selected MTJ, firstneighboring MTJ, and second neighboring MTJ through the first transistorand second transistor, and a small sensing current is passed through theselected MTJ by the first bit/source line.
 8. The STTRAM array, asrecited in claim 7, wherein the small sensing current is substantiallybetween 10 and 50 μA.
 9. The STTRAM array, as recited in claim 4,wherein the first bit/source line is a source line and the secondbit/source line is a bit line.
 10. The STTRAM array, as recited in claim4, wherein the first bit/source line is a bit line and the secondbit/source line is a source line.
 11. A spin-torque transfer memoryrandom access memory (STTMRAM) array comprising: a selected magnetictunnel junction (MTJ) identified to be programmed by switching the statethereof upon application of a switching current sufficient to switch thestate of the selected MTJ; a first transistor coupled to the selectedMTJ, the first transistor having a first gate; a first neighboring MTJcoupled to the selected MTJ; a second transistor coupled to the selectedMTJ, the second transistor having a gate; a second neighboring MTJcoupled to the second transistor; a first bit/source line coupled to theselected MTJ; and a second bit/source line coupled to the firstneighboring MTJ and the second neighboring MTJ, wherein the switchingcurrent applied to the selected MTJ is derived from the current flowingthrough the first and second neighboring MTJs with substantially half ofthe switching current being provided by the first neighboring MTJ andthe remainder of the switching current being provided by the secondneighboring MTJ.
 12. The STTRAM array, as recited in claim 11, whereinthe switching current applied to the selected MTJ derived from thecurrent through the first and second neighboring MTJs is substantiallybetween 150 and 250 μA.
 13. The STTRAM array, as recited in claim 11,wherein during reading of the selected MTJ, a positive voltagesubstantially equal to Vcc is applied to the first neighboring MTJ andsecond neighboring MTJ through the second bit/source line, a positivevoltage substantially equal to Vcc is applied to the selected MTJ, firstneighboring MTJ, and second neighboring MTJ through the first transistorand second transistor, and a small sensing current is passed through theselected MTJ by the first bit/source line.
 14. The STTRAM array, asrecited in claim 13, wherein the small sensing current is substantiallybetween 10 and 50 μA.
 15. The STTRAM array, as recited in claim 11,wherein the first bit/source line is a source line and the secondbit/source line is a bit line.
 16. The STTRAM array, as recited in claim11, wherein the first bit/source line is a bit line and the secondbit/source line is a source line.